Typical Electrical Characteristics
(continued)
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
2000
I
D
= -5.3A
8
6
CAPACITANCE (pF)
V
DS
= -5V
-10V
-15V
1000
Ciss
Coss
500
4
200
2
C
rss
100
0
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
f = 1 MHz
V
GS
= 0 V
0.3
1
3
10
30
50
0.1
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
-I
D
, DRAIN CURRENT (A)
10
RD
S(O
N)
L
T
IMI
1
0.1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A A
= 25°C
0.2
0.5
1
2
100
us
1m
s
10m
s
10
0m
s
1s
10s
DC
40
POWER (W)
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
30
20
10
0.01
0.1
0
0.0001
0.001
0.01
0.1
1
10
100 300
5
10
20
50
SINGLE PULSE TIME (SEC)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.0001
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125
°C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/ t
0.01
0.1
t
1
, TIME (sec)
1
10
2
0.001
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9435A Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
