May 1999
FDS9435A
Single P-Channel Enhancement Mode Field Effect Transistor
GeneralDescription
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
-5.3 A, -30 V, R
DS(ON)
= 0.045
Ω
@ V
GS
= -10 V,
R
DS(ON)
= 0.075
Ω
@ V
GS
= - 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
D
D
D
S
F D 5A
3
94
pin
1
5
6
S
G
4
3
2
1
7
8
SO-8
S
S
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25
o
C unless otherwise noted
FDS9435A
Units
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
-30
-20
- 5.3
-50
2.5
1.2
1
-55 to 150
V
V
A
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
FDS9435A Rev.C
© 1999 Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
