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FDS9435A-NBAD008 参数 Datasheet PDF下载

FDS9435A-NBAD008图片预览
型号: FDS9435A-NBAD008
PDF下载: 下载PDF文件 查看货源
内容描述: [Transistor]
分类和应用:
文件页数/大小: 5 页 / 64 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS9435A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –24 V,
V
GS
= 25 V,
V
GS
= –25 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–30
Typ
Max Units
V
Off Characteristics
–23
–1
100
–100
–1
–1.7
4.5
42
65
57
–25
10
50
80
77
–3
mV/°C
µA
nA
nA
V
mV/°C
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V,
I
D
= –5.3 A
V
GS
= –4.5 V, I
D
= –4 A
V
GS
= –10 V, I
D
= –5.3 A, T
J
=125°C
V
GS
= –10 V,
V
DS
= –5 V,
V
DS
= –5 V
I
D
= –5.3 A
I
D(on)
g
FS
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
528
132
70
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
7
13
14
9
14
24
25
17
14
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –4 A,
10
2.2
2
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –2.1 A
Voltage
–2.1
(Note 2)
A
V
–0.8
–1.2
a) 50°C/W when
mounted on a 1in
2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS9435A Rev D1(W)