Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA
–30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
VDS = –24 V, VGS = 0 V
–23
mV/°C
mA
IDSS
Zero Gate Voltage Drain Current
–1
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 25 V,
VGS = –25 V
VDS = 0 V
VDS = 0 V
100
–100
nA
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 mA
–1
–1.7
4.5
–3
V
DVGS(th)
DTJ
RDS(on)
ID = –250 mA, Referenced to 25°C
mV/°C
mW
VGS = –10 V,
ID = –5.3 A
42
65
57
50
80
77
VGS = –4.5 V, ID = –4 A
VGS= –10 V, ID = –5.3 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –5.3 A
–25
A
S
Forward Transconductance
10
Dynamic Characteristics
C
Input Capacitance
528
132
70
pF
pF
pF
iss
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 W
7
13
14
9
14
24
25
17
14
ns
ns
ns
ns
Qg
VDS = –15 V,
VGS = –10 V
ID = –4 A,
10
2.2
2
nC
nC
nC
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.8
Voltage
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
2
2
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS9435A Rev D1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
