FDS8958
Typical Characteristics: Q2
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -5.3A
8
-15V
6
V
DS
= -5V
-10V
1000
f = 1 MHz
V
GS
= 0 V
800
CAPACITANCE (pF)
C
ISS
600
4
400
C
OSS
2
200
C
RSS
0
0
4
8
Q
g
, GATE CHARGE (nC)
12
16
0
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
-I
D
, DRAIN CURRENT (A)
10
1s
1
DC
0.1
V
GS
= -10V
SINGLE PULSE
o
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
Figure 18. Capacitance Characteristics.
50
1ms 100
µ
s
10ms
100ms
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
30
10s
20
10
0
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.
R
θ
JA
(t) = r(t) + R
θ
JA
0.1
0.05
0.02
0.01
SINGLE PULSE
0.1
R
θ
JA
= 135 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.01
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958 Rev A(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
