FDS8958
Electrical Characteristics
Symbol
Parameter
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Ω
Q2
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -10V, R
GEN
= 6
Ω
Q1
V
DS
= 15 V, I
D
= 7 A, V
GS
= 10 V
Q2
V
DS
= -15 V, I
D
= -5 A,V
GS
= -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
6.7
10
9.7
18
19.8
5
12.3
16
14
2.5
2.2
2.1
1.9
12
13.4
18
19.4
29
35.6
12
22.2
26
23
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward V
GS
= 0 V, I
S
= 1.3 A
Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
(Note 2)
0.74
-0.76
1.3
-1.3
1.2
-1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 78°/W when
mounted on a
2
0.5 in pad of 2 oz
copper
b) 125°/W when
mounted on a .02 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8958 Rev A(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
