FDS8958A
Typical Characteristics Q2
10
I
D
= -5.3A
V
DS
= -5V
8
-15V
6
-10V
1000
f = 1 MHz
V
GS
= 0 V
C
ISS
800
600
4
400
C
OSS
2
200
C
RSS
0
0
5
10
15
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
0
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
10
µ
1ms 100 s
10ms
100ms
1s
1
DC
0.1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 135 C/W
T
A
= 25 C
0.01
0.1
1
10
100
0
o
o
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
40
30
10s
20
10
0.001
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) + R
θ
JA
0.1
0.05
0.02
0.01
SINGLE PULSE
0.1
R
θ
JA
= 135 C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
o
0.01
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
