FDS8958A
Typical Characteristics: Q1
30
V
GS
= 10V
7.0V
5.0V
20
4.5V
4.0V
3.5V
2.4
2.2
2.0
1.8
1.6
3.0V
1.4
1.2
2.5V
1.0
0.8
0
1
2
3
4
5
0
6
12
18
24
30
3.5V
4.0V
4.5V
5.0V
6.0V
7.0V
10V
V
GS
= 3.0V
10
0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
1.9
I
D
= 7A
V
GS
= 10V
0.08
0.07
0.06
0.05
T
A
= 125 C
o
I
D
= 7A
1.6
1.3
1.0
0.04
0.03
0.02
T
A
= 25 C
o
0.7
0.4
-50
-25
0
25
50
75
100
o
0.01
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
30
V
DS
= 10V
25
20
125 C
15
o
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
T
A
= -55 C
25 C
o
10
T
A
= 125 C
1
25 C
0.1
o
o
10
0.01
5
0
1
2
3
4
5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-55 C
o
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
