FDS8958A
Typical Characteristics: Q2
30
V
GS
= -10.0V
25
20
15
10
5
0
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-3.5V
-7.0V
-6.0V
-4.0V
-5.0V
2.5
V
GS
= -3.5V
2
-4.0V
1.5
-4.5V
-5.0V
-6.0V
1
-7.0V
-10.0V
-3.0V
0.5
0
6
12
18
24
30
-I
D
, DRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
1.6
I
D
= -5A
V
GS
= -10V
I
D
= -5A
1.4
0.15
1.2
0.1
1.0
0.05
T
A
= 125 C
T
A
= 25 C
o
o
0.8
0.6
-50
-25
0
25
50
75
100
o
0
125
150
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 13. On-Resistance Variation with
Temperature.
30
V
DS
= -10V
25
20
15
125 C
10
5
0
1.5
2.5
3.5
4.5
5.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
o
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
T
A
= -55 C
10
25 C
1
o
o
V
GS
= 0V
T
A
= 125 C
25 C
o
o
0.1
-55 C
o
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev D1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
