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FDS8958AS62Z 参数 Datasheet PDF下载

FDS8958AS62Z图片预览
型号: FDS8958AS62Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8]
分类和应用: 开关脉冲光电二极管晶体管
文件页数/大小: 8 页 / 198 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS8958A
January 2002
FDS8958A
Dual N & P-Channel PowerTrench
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1:
N-Channel
R
DS(on)
= 0.028Ω @ V
GS
= 10V
R
DS(on)
= 0.040Ω @ V
GS
= 4.5V
Q2:
P-Channel
R
DS(on)
= 0.052Ω @ V
GS
= -10V
R
DS(on)
= 0.080Ω @ V
GS
= -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
7.0A, 30V
-5A, -30V
D1
D
D1
D
D2
D
D
D2
5
6
G2
S2
G
Q2
4
3
7
8
Q1
2
1
SO-8
Pin 1
SO-8
G1
S1
S
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
T
A
= 25°C unless otherwise noted
Parameter
Q1
30
(Note 1a)
Q2
30
±20
-5
-20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
±20
7
20
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS8958A
2002
Fairchild Semiconductor Corporation
Device
FDS8958A
Reel Size
13”
Tape width
12mm
Quantity
2500 units
FDS8958A Rev D1(W)