Typical Characteristics
T
J
= 25°C unless otherwise noted
V
GS
, GATE TO SOURCE VOLTAGE(V)
FDS8884 N-Channel PowerTrench
®
MOSFET
10
8
6
4
2
0
V
DD
= 10V
V
DD
= 15V
700
600
CAPACITANCE (pF)
C
iss
f = 1MHz
V
GS
= 0V
500
400
300
200
100
V
DD
= 20V
C
oss
C
rss
0
2
4
6
8
10
0.1
Q
g
, GATE CHARGE(nC)
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
20
I
AS
, AVALANCHE CURRENT(A)
Figure 8. Capacitance vs Drain to Source Voltage
9
8
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
10
STARTING T
J
= 25
o
C
7
6
5
4
3
2
1
R
θ
JA
= 50
o
C/W
V
GS
= 4.5V
STARTING T
J
= 125
o
C
1
0.01
0.1
1
t
AV
, TIME IN AVALANCHE(ms)
10
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE
(
o
C
)
Figure 9. Unclamped Inductive Switching
Capability
100
I
D
, DRAIN CURRENT (A)
10us
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
P
(PK)
, PEAK TRANSIENT POWER
(
W
)
2000
1000
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
10
100us
100
I = I
25
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
1ms
10ms
100ms
1s
DC
V
GS
=10V
150
–
T
A
-----------------------
-
125
0.1
10
SINGLE PULSE
0.01
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1
-5
10
10
-4
10
-3
10
10
10
t, PULSE WIDTH (s)
-2
-1
0
10
1
10
2
Figure 11.
Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
FDS8884 Rev. A
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
