FDS8884 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
I
D
, DRAIN CURRENT (A)
3.0
2.5
2.0
V
GS
= 3V
V
GS
= 3.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
30
20
V
GS
= 4V
V
GS
= 4.5V
1.5
1.0
V
GS
= 5V
V
GS
= 10V
10
V
GS
= 3V
0
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4.0
0.5
5
10
15
20
25
30
I
D
, DRAIN CURRENT(A)
35
40
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain
current and Gate Voltage
60
r
DS(ON)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω
)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 8.5A
V
GS
= 10V
55
50
45
40
35
30
25
20
15
2
I
D
= 8.5A
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction
Temperature
40
I
D
, DRAIN CURRENT (A)
35
30
25
20
15
10
5
0
1
T
J
= -55
o
C
T
J
= 150
o
C
Figure 4. On-Resistance vs Gate to Source
Voltage
40
I
S
, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
DD
= 5V
T
J
= 25
o
C
10
V
GS
= 0V
1
T
A
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= -55
o
C
0.01
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
3
FDS8884 Rev. A
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
