Typical Characteristics TJ = 25°C unless otherwise noted
10
8
104
V
DD
= 10V
C
iss
103
102
101
V
= 20V
DD
6
C
oss
V
DD
= 30V
4
C
rss
2
f = 1MHz
= 0V
V
GS
0
40
0.1
1
10
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
15
12
16
13
10
7
V
= 10V
GS
TJ = 25oC
9
6
3
V
= 4.5V
GS
TJ = 125oC
4
R
θJA
= 50oC/W
50
0
25
1
0.01
75
100
125
150
0.1
1
10
100
TA, AMBIENT TEMPERATURE (oC)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
2000
1000
100us
VGS = 10V
10
1
1ms
100
SINGLE PULSE
R
T
= 125°C/W
= 25°C
θJA
10ms
100ms
1s
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
A
10
0.1
SINGLE PULSE
T
= MAX RATED
= 25OC
J
10s
SINGLE PULSE
T
A
DC
1
0.01
10-4
10-3
10-2
10-1
100
101
102
103
200
100
0.01
0.1
1
10
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8447 Rev.B
4
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FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
