Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V, VDS = 0V
34
mV/°C
1
µA
µA
nA
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
10
±100
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
1
1.8
-5
3
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C
Temperature Coefficient
mV/°C
VGS = 10V, ID = 12.8A
9
10
10.5
12.3
15
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 11.4A
mΩ
VGS = 10V, ID = 12.8A,TJ = 125°C
VDS = 10V, ID = 12.8A
13
75.3
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2000
250
150
1.3
2600
350
pF
pF
pF
Ω
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
250
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
11
14
27
7
20
25
42
14
49
27
ns
ns
VDD = 20V, ID = 12.8A
VGS = 10V, RGEN = 4.5Ω
Rise Time
Turn-Off Delay Time
ns
Fall Time
ns
Qg
Total Gate Charge at VGS = 10V
Total Gate Charge at VGS = 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
35
19
6
nC
nC
nC
nC
Qg
VDS = 20V, ID = 12.8A,
Qgs
Qgd
7
Drain-Source Diode Characteristics and Maximum Ratings
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = 12.8A (note 2)
0.84
19
1.2
29
19
V
Reverse Recovery Time
IF = 12.8A, diF/dt = 100A/µs
Reverse Recovery Charge
ns
nC
Qrr
9.5
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
θJA
θJC
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
b) 125°C/W when mounted on a
minimum pad .
2
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T = 25°C, L = 3mH, I = 10A, V = 40V, V = 10V.
J
AS
DD
GS
FDS8447 Rev.B
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
