FDS8433A
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
(continued)
3000
I
D
=-5.0A
V
DS
= -5V
-15V
CAPACITANCE (pF)
2000
4
-10V
Ciss
1000
500
3
Coss
2
200
1
C
rss
100
50
0.1
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
0
0
4
8
12
Q
g
, GATE CHARGE (nC)
16
20
Figure 7. Gate-Charge Characteristics.
100
T
IMI
Figure 8. Capacitance Characteristics.
50
L
N)
S(O
RD
-I
D
, DRAIN CURRENT (A)
10
1
0.1
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
0.2
1m
s
10m
s
10
0m
s
1s
10s
DC
100
us
40
POWER (W)
SINGLE PULSE
R
θJA
=125°C/W
T
A
= 25°C
30
20
10
0.01
0.1
0.5
1
2
5
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
20
50
0
0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100
300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), N O R M A L IZ E D E F F E C TIV E
TR A N SIEN T TH ER MA L R E S IS TA N CE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
D = 0.5
0 .2
0.1
0 .05
0 .02
0 .01
S in gle Pu lse
P (p k)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=
125
°C /W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
D uty C y cle, D = t
1
/t
2
0.001
0.01
0.1
t
1
, TIM E (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient themal response will change depending on the circuit board design.
FDS8433A Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
