FDS8433A
DMOS Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
V
GS
= 0 V, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
(Note 2)
-20
-25
-1
100
-100
V
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
GS
= -4.5 V, I
D
= -5 A
V
GS
= -4.5 V, I
D
= -5 A, T
J
=125
°
C
V
GS
= -2.5 V, I
D
= -4.3 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -5 A
-0.4
-0.6
4
0.036
0.050
0.047
-1
V
mV/
°
C
0.045
0.085
0.070
I
D(on)
g
FS
-25
16
Ω
Ω
Ω
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1130
480
120
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
8
23
260
90
16
37
360
125
28
ns
ns
ns
ns
nC
nC
nC
V
DS
= -5 V, I
D
= -5 A,
V
GS
= -5 V,
20
2.8
3.2
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-2.1
-0.8
-1.2
A
V
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W when mounted
on a 0.006 in
2
pad
of 2 oz. copper.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS8433A Rev. B1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
