FDS6982AS
Typical Characteristics: Q2
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 8.6A
8
V
DS
= 10V
6
15V
4
20V
CAPACITANCE (pF)
2000
f = 1MHz
V
GS
= 0 V
1600
1200
C
iss
800
C
oss
400
C
rss
2
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
100
µ
s
I
D
, DRAIN CURRENT (A)
10
1ms
10ms
100ms
1s
10s
DC
0.1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 135
o
C/W
T
A
= 25 C
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
o
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
40
SINGLE PULSE
R
θ
JA
= 135°C/W
T
A
= 25°C
30
1
20
10
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 135°C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6982AS Rev A1 (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
