FDS6982AS
March 2005
FDS6982AS
General Description
Dual Notebook Power Supply N-Channel PowerTrench
®
SyncFET
™
Features
•
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
R
DS(on)
max= 13.5mΩ @ V
GS
= 10V
R
DS(on)
max= 16.5mΩ @ V
GS
= 4.5V
•
•
Low gate charge (21nC typical)
Q1:
Optimized for low switching losses
R
DS(on)
max= 22.0mΩ @ V
GS
= 10V
R
DS(on)
max= 29.0mΩ @ V
GS
= 4.5V
•
Low gate charge (11nC typical)
The FDS6982AS is designed to replace two single SO-
8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET
technology.
8.6A, 30V
6.3A, 30V
Applications
•
Notebook
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25°C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30
±20
6.3
20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
±20
8.6
30
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6982AS
FDS6982AS
FDS6982AS
Device
FDS6982AS
FDS6982AS_NL
(Note 4)
FDS6982AS_NF40
(Note 5)
Reel Size
13”
13”
13”
Tape width
12mm
12mm
12mm
Quantity
2500 units
2500 units
2500 units
FDS6982AS Rev A1(X)
©2005
Fairchild Semiconductor Corporation
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
