Typical Characteristics: Q2
2.5
2
50
VGS = 10V
6.0V
40
30
20
10
0
4.5V
4.0V
VGS = 3.0V
5.0V
1.5
1
3.5V
3.5V
4.0V
4.5V
6.0V
10V
40
3.0V
0.5
0
10
20
30
50
0
0.5
1
1.5
2
2.5
150
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
2
ID = 11.5 A
ID = 11.5A
VGS = 10V
1.8
0.035
0.03
1.6
1.4
1.2
1
0.025
0.02
TA = 125oC
0.8
0.6
0.4
0.015
0.01
TA = 25oC
-50
-25
0
25
50
75
100
125
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
50
VGS = 0V
TA = -55oC
VDS = 5V
25oC
100o
40
30
20
10
0
1
0.1
TA = 100oC
25oC
-55oC
0.01
0
0.2
0.4
0.6
0.8
1
2
3
4
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6982S Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
