Electrical Characteristics (continued)
Symbol Parameter Test Conditions
TA = 25°C unless otherwise noted
Type Min Typ Max Units
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 15 V, ID = 1 A,
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
10
10
18
18
18
25
55
34
23
14
25
12
ns
ns
VGS = 10V, RGEN = 6 Ω
10
14
34
ns
21
14
ns
7
Qg
Qgs
Qgd
Q2
17.5
8.5
6.3
2.4
5.4
3.1
nC
nC
nC
VDS = 15 V, ID = 11.5 A, VGS = 5 V
Q1
VDS = 15 V, ID = 6.3 A, VGS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Q2
Q1
Q2
3.0
1.3
A
ns
nC
V
tRR
QRR
VSD
Reverse Recovery Time
Reverse Recovery Charge
IF = 11.5A,
20
19.7
0.42
0.56
0.70
diF/dt = 300 A/µs
(Note 3)
(Note 2)
Drain-Source Diode Forward VGS = 0 V, IS = 3 A
Q2
Q2
Q1
.7
Voltage
VGS = 0 V, IS = 6 A
(Note 2)
(Note 2)
VGS = 0 V, IS = 1.3 A
1.2
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°/W when
c) 135°/W when mounted on a
minimum pad.
mounted on a .02 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6982S Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
