Typical Electrical Characteristics
(continued)
10
- V
GS
, GATE-SOURCE VOLTAGE (V)
3000
I
D
= -6A
8
V
DS
= -5V
CAPACITANCE (pF)
2000
C iss
-10V
-15V
1000
6
500
Coss
4
2
200
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
Crss
0
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
100
0.1
10
20
30
- V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
30
10
- I
D
, DRAIN CURRENT (A)
3
I
LIM
N)
(O
S
RD
T
10
1m
10m
0u
30
s
25
20
15
10
5
0
0.01
s
s
1s
0.5
10
0.05
V
GS
= -10V
SINGLE PULSE
R
θ
JA
=135°C/W
T
A
= 25°C
0.3
1
2
DC
s
0.01
0.1
5
10
30
50
POWER (W)
10
s
SINGLE PULSE
R
θ
JA
=135°C/W
T
A
= 25°C
0m
0.1
0.5
10
50 100
300
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 135°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA(t)
Duty Cycle, D = t
1
/t
2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6975 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
