Typical Electrical Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
10
1000
I
D
= 5.5A
8
V
DS
= 5V
500
15V
6
10V
CAPACITANCE (pF)
C iss
200
100
50
Coss
4
2
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
C rss
0
0
2
4
6
8
10
0.1
10
30
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
I
D
, DRAIN CURRENT (A)
10
2
0.5
S(O
L
N)
IM
IT
30
100
1m
10m
s
us
POWER (W)
25
20
15
10
5
0
0.01
RD
SINGLE PULSE
R
θ
JA
=135 °C/W
T
A
= 25°C
10
10s
DC
s
0m
s
1s
0.05
0.01
0.1
V
GS
=10V
SINGLE PULSE
R
θ
JA
=135°C/W
A
T
A
=25°C
0.5
1
2
5
10
30
50
0.1
0.5
10
50 100
300
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=135° C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6930A Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
