October 1998
FDS6930A
Dual N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
5.5 A, 30 V. R
DS(ON)
= 0.040
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.055
Ω
@ V
GS
= 4.5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
These N-Channel Logic Level MOSFETs are
produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize the on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line
power loss and fast switching are required.
SOT-23
SuperSOT
TM
-6
SuperSOT -8
TM
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
6
4
3
2
1
S
FD 0A
3
69
G1
S2
G2
7
8
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless otherwise noted
FDS6930A
30
±20
(Note 1a)
Units
V
V
A
5.5
20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
-55 to 150
W
W
T
J
,T
STG
R
θ
JA
R
θ
JC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS6930A Rev.D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
