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FDS6898A 参数 Datasheet PDF下载

FDS6898A图片预览
型号: FDS6898A
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道逻辑电平PWM优化的PowerTrench MOSFET [Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET]
分类和应用:
文件页数/大小: 5 页 / 82 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6898A
Typical Characteristics
40
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
3.0V
2.5V
30
2.2
2
V
GS
= 2.0V
1.8
1.6
1.4
1.2
1
0.8
0
0.5
1
1.5
2
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
20
2.0V
2.5V
3.0V
4.0V
4.5V
10
0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.038
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 4.7A
0.03
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 9.4A
V
GS
= 4.5V
1.4
1.2
0.022
T
A
= 125
o
C
0.014
T
A
= 25 C
0.006
o
1
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
40
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
30
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= -55
o
C
25 C
125 C
o
o
V
GS
= 0V
10
T
A
= 125
o
C
1
25
o
C
20
0.1
-55 C
o
0.01
0.001
0.0001
10
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6898A Rev C (W)