Typical Electrical Characteristics (continued)
4000
2000
1000
500
5
ID
= -6A
C
iss
4
3
2
1
0
VDS
=
-5V
-10V
-15V
C
oss
C
rss
200
100
f = 1 MHz
VGS
=
0 V
0.1
0.2
0.5
1
2
5
10
20
0
5
10
15
20
25
- V
, DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
30
10
30
25
20
15
10
5
SINGLE PULSE
R JA =135°C/W
q
A
T
= 25°C
3
0.5
VGS = -4.5V
SINGLE PULSE
R JA = 135° C/W
0.05
0.01
q
TA
= 25° C
0
0.01
0.1
0.5
10
50 100
300
0.1
0.3
- V
1
2
5
10
30
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
q
JA
JA
q
R
= 135°C/W
JA
q
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t
1
t
2
Single Pulse
0.005
T
- T = P * R
(t)
JA
J
A
q
Duty Cycle, D = t /t
0.002
0.001
1
2
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6875 Rev.C
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
