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FDS6875S62Z 参数 Datasheet PDF下载

FDS6875S62Z图片预览
型号: FDS6875S62Z
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8]
分类和应用: 开关脉冲光电二极管晶体管
文件页数/大小: 5 页 / 62 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
 浏览型号FDS6875S62Z的Datasheet PDF文件第1页浏览型号FDS6875S62Z的Datasheet PDF文件第2页浏览型号FDS6875S62Z的Datasheet PDF文件第4页浏览型号FDS6875S62Z的Datasheet PDF文件第5页  
Typical Electrical Characteristics  
20  
VGS = -4.5V  
-2.5V  
2.5  
2
-3.0V  
15  
VGS  
= -2.0V  
-2.0V  
10  
1.5  
1
-2.5 V  
-3.0 V  
-3.5 V  
5
0
-4.5V  
0.5  
0
0.6  
- V  
1.2  
1.8  
2.4  
3
0
4
8
12  
16  
20  
, DRAIN-SOURCE VOLTAGE (V)  
DS  
- I , DRAIN CURRENT (A)  
D
Figure 1. On-Region Characteristics.  
Figure 2. On-Resistance Variation with  
Dain Current and Gate Voltage.  
1.6  
0.1  
0.08  
0.06  
0.04  
0.02  
0
ID = -3.0A  
I D  
VGS  
=
-6A  
-4.5V  
=
1.4  
1.2  
1
T
= 125°C  
25° C  
4
A
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
5
T
, JUNCTION TEMPERATURE (° C)  
- V , GATE TO SOURCE VOLTAGE (V)  
GS  
J
Figure 3. On-Resistance Variation with  
Figure 4. On-Resistance Variation with  
Gate-to-Source Voltage.  
Temperature.  
20  
5
20  
15  
10  
5
VGS  
= 0V  
VDS = -5.0V  
T
= -55° C  
J
25° C  
125° C  
1
0.1  
T
= 125° C  
J
25° C  
-55° C  
0.01  
0.001  
0
0.5  
0
0.3  
, BODY DIODE FORWARD VOLTAGE (V)  
SD  
0.6  
0.9  
1.2  
1
1.5  
2
2.5  
- V  
- V  
, GATE TO SOURCE VOLTAGE (V)  
GS  
Figure 5. Transfer Characteristics.  
Figure 6. Body Diode Forward Voltage  
Variation with Source Current  
and Temperature.  
FDS6875 Rev.C