FDS6690A
Typical Characteristics
10
1600
I
D
= 11.0A
V
DS
= 10V
15V
f = 1MHz
V
GS
= 0 V
V
GS
, GATE-SOURCE VOLTAGE (V)
8
20V
6
CAPACITANCE (pF)
1200
C
iss
800
4
2
400
C
oss
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
¡
Figure 8. Capacitance Characteristics.
100
100
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
100ms
1
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 125 C/W
T
A
= 25 C
o
1s
10s
I
AS
, AVALANCHE CURRENT (A)
1ms
10ms
DC
10
¢
Tj=25
0.1
0.01
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
1
0.01
0.1
t
AV
, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching
Capability Figure
50
P(pk), PEAK TRANSIENT POWER (W)
40
30
20
10
0
0.001
0.01
0.1
t
1
, TIME (sec)
1
Figure 11. Single Pulse Maximum Power Dissipation.
¢
Tj=125
1
10
100
SINGLE PULSE
C/W
R
θJA
= 125°
T
A
= 25°
C
10
100
FDS6690A Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
