FDS6690A
Typical Characteristics
50
V
GS
= 10V
40
I
D
, DRAIN CURRENT (A)
3
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
V
GS
= 3.0V
2.5
6.0V
4.5V
3.5.V
30
2
3.5V
20
1.5
4.0V
4.5V
6.0V
10V
10
3.0V
1
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
0.5
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.05
1.8
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
1.4
1.2
1
0.8
0.6
-50
I
D
= 11.0A
V
GS
= 10V
I
D
= 5.5A
0.04
0.03
0.02
T
A
= 125 C
o
T
A
= 25 C
0.01
o
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (
o
C)
150
175
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
40
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
10
1
0.1
0.01
0.001
T
A
= 125 C
o
30
25 C
o
20
T
A
= 125 C
10
o
25 C
-55 C
o
o
-55 C
o
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690A Rev E1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
