FDS6690AS
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=10A
1400
1200
f = 1MHz
V
GS
= 0 V
8
CAPACITANCE (pF)
V
DS
= 10V
20V
1000
800
600
C
oss
C
iss
6
15V
4
400
200
C
rss
2
0
0
3
6
9
12
15
Q
g
, GATE CHARGE (nC)
18
21
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
100
µ
s
1ms
10ms
100ms
1s
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
I
D
, DRAIN CURRENT (A)
40
10
30
1
DC
V
GS
= 10V
SINGLE PULSE
o
R
θ
JA
= 125 C/W
T
A
= 25 C
o
10s
20
0.1
10
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690AS Rev A (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
