FDS6690AS
Typical Characteristics
50
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
4.0V
2.2
V
GS
= 4.0V
40
I
D
, DRAIN CURRENT (A)
6.0V
4.5V
1.8
3.5V
30
3.0V
1.4
4.0V
4.5V
5.0V
6.0V
10V
20
1
10
2.5V
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
0.6
0
10
20
30
I
D
, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.45
1.3
1.15
1
0.85
0.7
-50
-25
0
25
50
75
100
o
T
J
, JUNCTION TEMPERATURE ( C)
125
150
I
D
= 10A
V
GS
= 10V
I
D
= 5A
0.05
0.04
0.03
T
A
= 125 C
0.02
o
0.01
T
A
= 25
o
C
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
I
D
, DRAIN CURRENT (A)
40
1
T
A
= 125
o
C
30
0.1
25
o
C
-55
o
C
20
T
A
= 125 C
o
-55 C
o
0.01
10
25
o
C
0
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
0.001
0
0.2
0.4
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690AS Rev A (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
