Typical Electrical And Thermal Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
3000
I
D
= 11.5A
8
V
DS
= 10V
15V
CAPACITANCE (pF)
2000
C iss
20V
6
1000
4
500
C oss
2
C rss
200
0
0
10
20
Q
g
, GATE CHARGE (nC)
30
40
f = 1 MHz
V
GS
= 0V
0.2
0.5
1
2
5
10
20
30
100
0.1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
50
I
D
, DRAIN CURRENT (A)
20
10
3
1
RD
Figure 8. Capacitance Characteristics.
50
S(O
LI
N)
MIT
100
us
1m
s
POWER (W)
40
10m
s
100
ms
1s
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= See Note 1c
T
A
= 25°C
0.2
0.5
1
2
SINGLE PULSE
R
θ
JA
=See Note 1c
T
A
= 25°C
30
10
s
DC
20
0.1
10
0.01
0.1
0
0.001
0.01
0.1
1
10
100
300
5
10
30
50
SINGLE PULSE TIME (SEC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=See Note 1c
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680 Rev.E1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
