Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25
o
C
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA, Referenced to 25 C
V
GS
= 10 V, I
D
= 11.5 A
T
J
=125°C
V
GS
= 4.5 V, I
D
= 9.5 A
o
30
23
1
10
100
-100
V
mV/
o
C
µA
µA
nA
nA
∆
BV
DSS
/
∆
T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
(Note 2)
ON CHARACTERISTICS
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
1
1.7
-5
0.0085
0.014
0.0125
3
V
mV/
o
C
∆
V
GS(th)
/
∆
T
J
R
DS(ON)
0.01
0.017
0.015
Ω
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
Notes:
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 15 V, I
D
= 11.5 A
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
50
40
2070
510
235
A
S
pF
pF
pF
21
18
58
23
27
ns
ns
ns
ns
nC
nC
nC
2.1
A
V
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 15 V, I
D
= 1 A
V
GS
= 10 V , R
GEN
=
6 Ω
13
10
36
13
V
DS
= 15 V, I
D
= 11.5 A,
V
GS
= 5 V
19
7
6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
1.2
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
a. 50
O
C/W on a 1 in
2
pad
of 2oz copper.
b. 105
O
C/W on a 0.04 in
2
pad of 2oz copper.
c. 125
O
C/W on a 0.006 in
2
pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6680 Rev.E1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
