FDS6680AS
30V N-Channel PowerTrench
®
SyncFET™
Typical Characteristics
(continued)
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
=11.5A
8
V
DS
= 10V
20V
6
15V
4
CAPACITANCE (pF)
1800
f = 1MHz
V
GS
= 0 V
1500
1200
C
iss
900
600
C
oss
2
300
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
50
Figure 8. Capacitance Characteristics.
100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
100
µ
s
1ms
40
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
10
1s
1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25 C
0.01
0.1
o
10ms
100ms
10s
DC
30
20
0.1
10
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
100
0
0.01
0.1
1
10
t
1
, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
P(pk)
0.01
SINGLE PULSE
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680AS Rev B2(X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
