FDS6680AS
30V N-Channel PowerTrench
®
SyncFET™
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
T
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= 11.5A,
I
S
= 3.5 A
I
S
= 7 A
(Note 2)
(Note 2)
3.5
0.5
0.6
18
12
0.7
A
V
nS
nC
d
iF
/d
t
= 300 A/µs
(Note 3)
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50°/W when
mounted on a 1 in
2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3.
See “SyncFET Schottky body diode characteristics” below.
FDS6680AS Rev B2(X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
