FDS6679
Typical Characteristics
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -13A
8
-15V
CAPACITANCE (pF)
V
DS
= -5V
-10V
6000
f = 1 MHz
V
GS
= 0 V
C
ISS
4000
5000
6
3000
4
2000
C
OSS
C
RSS
2
1000
0
0
10
20
30
40
50
60
70
80
Q
g
, GATE CHARGE (nC)
0
0
5
10
15
20
25
30
-V
D S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
1ms
10ms
100ms
1s
1
V
GS
= -10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
10s
DC
P(pk), PEAK TRANSIENT POWER (W)
100µs
R
DS(ON)
LIMIT
50
Figure 8. Capacitance Characteristics.
40
-I
D
, DRAIN CURRENT (A)
10
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
30
20
0.1
10
0
0.001
0.01
0.1
1
10
100
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
J A
(t) = r(t) + R
θ
J A
R
θ
J A
= 125 C/W
P(pk)
t
1
t
2
SINGLE PULSE
o
0.1
0.1
0.05
0.02
0.01
0.01
T
J
- T
A
= P * R
θJ
A
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient t hermal response will change depending on the circuit board design.
FDS6679 Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
