FDS6679
May 2001
FDS6679
30 Volt P-Channel PowerTrench
®
MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
•
–13 A, –30 V. R
DS(ON)
= 9 mΩ @ V
GS
= –10 V
R
DS(ON)
= 13 mΩ @ V
GS
= – 4.5 V
•
Extended V
GSS
range (±25V) for battery applications
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–30
(Note 1a)
Units
V
V
A
W
±25
–13
–50
2.5
1.2
1.0
–55 to +175
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6679
Device
FDS6679
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
©2001
Fairchild Semiconductor Corporation
FDS6679 Rev C (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
