FDS6670AS
Typical Characteristics
50
V
GS
= 10V
40
6.0V
30
4.5V
3.0V
3.5V
4.0V
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
2.2
V
GS
= 3.0V
1.8
3.5V
1.4
20
4.0V
4.5V
6.0V
10V
10
2.5V
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
1
0.6
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
1.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 13.5A
V
GS
= 10V
1.2
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 6.75A
0.02
1
0.015
T
A
= 125 C
o
0.8
0.01
T
A
= 25 C
o
0.6
-50
-25
0
25
50
75
o
T
J
, JUNCTION TEMPERATURE ( C)
100
125
0.005
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
50
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
40
I
D
, DRAIN CURRENT (A)
V
GS
= 0V
1
T
A
= 125
o
C
25 C
o
30
0.1
-55 C
0.01
o
20
T
A
= 125
o
C
-55 C
o
10
25
o
C
0
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
0.001
0
0.1
0.2
0.3
0.4
0.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6670AS Rev A (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
