FDS6670AS
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±20
V,
V
GS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
31
500
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 13.5 A
I
D
= 11.2 A
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=13.5A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 5 V
I
D
= 13.5 A
1
1.7
–3.3
7.5
9
10
3
V
mV/°C
9
11.5
12.5
mΩ
I
D(on)
g
FS
50
66
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1540
440
160
2.1
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d
(
off
)
t
f
t
d(on)
t
r
t
d
(
off
)
t
f
Q
g(TOT)
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
10
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
5
27
18
13
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
15
24
13
27
V
DD
= 15 V,
I
D
= 13.5 A,
16
4.2
5.1
20
10
44
32
23
27
38
23
38
22
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
FDS6670AS Rev A (X)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
