Typical Electrical Characteristics
(continued)
5
- V
GS
, GATE-SOURCE VOLTAGE (V)
8000
I
D
= -10A
CAPACITANCE (pF)
4
V
DS
= -5V
-10V
-15V
4000
C iss
3
2000
1000
Coss
2
1
400
f = 1 MHz
V
GS
= 0 V
0.2
0.5
1
2
5
C rss
0
0
12
24
36
48
60
Q
g
, GATE CHARGE (nC)
200
0.1
10
20
- V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
200
50
- I
D
, DRAIN CURRENT (A)
10
2
0.5
0.1
I
LIM
N)
S(O
RD
T
50
10
1m
s
10m
s
10
0m
s
1s
10
s
DC
0u
s
POWER (W)
40
SINGLE PULSE
R
θ
JA
=125°C/W
T
A
= 25°C
30
V
GS
=-4.5V
SINGLE PULSE
R
θ
JA
=125°C/W
T
A
= 25°C
0.1
0.3
1
20
10
0.01
0.05
3
10
30
50
0
0.001
0.01
0.1
1
10
100
300
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6575 Rev.C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
