Typical Electrical Characteristics
50
- I
D
, DRAIN-SOURCE CURRENT (A)
-3.0V
R
DS(ON)
, NORMALIZED
40
-2.5V
-2.0V
DRAIN-SOURCE ON-RESISTANCE
V = -4.5V
GS
2.5
2
30
V
GS
= -2.0V
1.5
20
-2.5 V
-3.0 V
-3.5 V
-4.5V
10
1
-1.5V
0
0
0.6
1.2
1.8
2.4
3
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
0.5
0
10
20
30
40
50
- I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Dain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
R
DS(ON)
ON-RESISTANCE (OHM)
,
0.05
R
DS(ON)
, NORMALIZED
1.4
I
D
= -10A
V
GS
= -4.5V
I
D
= -5.0A
0.04
1.2
0.03
1
0.02
T J = 125° C
0.01
0.8
25° C
0
1
2
3
4
5
- V
GS
, GATE TO SOURCE VOLTAGE (V)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (° C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
TJ = -55° C
25° C
125° C
- I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5.0V
- I
D
, DRAIN CURRENT (A)
40
50
V
GS
= 0V
10
30
1
T J = 125° C
25° C
20
0.1
-55° C
10
0.01
0
0.5
1
1.5
2
2.5
0.001
0
0.3
0.6
0.9
1.2
- V
SD
, BODY DIODE FORWARD VOLTAGE (V)
- V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6575 Rev.C1
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
