FDS6575
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= -10A
4
-15V
3
CAPACITANCE (pF)
V
DS
= -5V
-10V
6000
C
ISS
5000
f = 1 MHz
V
GS
= 0 V
4000
3000
2
2000
C
OSS
1
1000
0
0
10
20
30
40
50
60
Q
g
, GATE CHARGE (nC)
C
RSS
0
0
5
10
15
20
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
1ms
10ms
100ms
1s
10s
DC
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
0.01
0.01
P(pk), PEAK TRANSIENT POWER (W)
100
µ
R
DS(ON)
LIMIT
50
Figure 8. Capacitance Characteristics.
40
-I
D
, DRAIN CURRENT (A)
10
SINGLE PULSE
R
θ
JA
= 125°C/W
T
A
= 25°C
30
1
20
0.1
10
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θ
JA
(t) = r(t) + R
θ
JA
R
θJA
= 125 C/W
P(pk)
t
1
t
2
SINGLE PULSE
o
0.1
0.1
0.05
0.02
0.01
0.01
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6575 Rev F(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
