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FDS6575 参数 Datasheet PDF下载

FDS6575图片预览
型号: FDS6575
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道2.5V指定的PowerTrench ? MOSFET [P-Channel 2.5V Specified PowerTrench?MOSFET]
分类和应用: 晶体晶体管开关光电二极管PC
文件页数/大小: 5 页 / 68 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS6575
Typical Characteristics
50
V
GS
= -4.5V
-3.0V
40
-I
D
, DRAIN CURRENT (A)
-2.0V
30
-1.5V
-2.5V
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2.2
2
V
GS
= - 1.5V
1.8
1.6
1.4
1.2
1
0.8
-2.0V
-2.5V
-3.0V
-3.5V
-4.5V
20
10
0
0
0.5
1
1.5
2
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
10
20
30
40
50
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
I
D
= -5A
R
DS(ON)
ON-RESISTANCE (OHM)
,
0.03
1.6
R
DS(ON)
NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
I
D
= -10A
V
GS
= - 4.5V
1.4
0.025
0.02
T
A
= 125
o
C
0.015
1.2
1
0.8
0.01
T
A
= 25
o
C
0.005
0
1
2
3
4
5
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
50
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
40
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25 C
125
o
C
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
0.01
-55
o
C
0.001
30
20
10
0
0
0.5
1
1.5
2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6575 Rev F(W)