FDS6294
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
8
V
DS
= 10V
15V
1500
C
ISS
1200
CAPACITANCE (pF)
20V
f = 1MHz
V
GS
= 0 V
6
900
4
600
C
OSS
300
C
RSS
2
0
0
5
10
Q
g
, GATE CHARGE (nC)
15
20
0
0
5
10
15
20
25
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
100µs
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
10
1ms
10ms
100ms
1s
10s
DC
40
SINGLE PULSE
R
θJA
= 125°C/W
T
A
= 25°C
30
1
20
0.1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25 C
o
10
0.01
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
0.01
0.01
SINGLE PULSE
0.001
0.0001
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6294 Rev D(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
