FDS4559
Typical Characteristics: Q1
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 4.5A
8
V
DS
= 10V
30V
20V
CAPACITANCE (pF)
900
800
700
600
500
400
300
200
100
0
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
0
0
10
20
30
40
50
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
C
RSS
C
ISS
f = 1MHz
V
GS
= 0 V
6
4
2
Figure 17. Gate Charge Characteristics.
100
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
1m
1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
DC
10ms
100ms
1s
POWER (W)
100µs
30
40
Figure 18. Capacitance Characteristics.
SINGLE PULSE
R
θJA
= 135
o
C/W
T
A
= 25
o
C
20
0.1
10
0
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 135°C/W
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.01
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4559 Rev C1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
