FDS4559
Typical Characteristics: Q2
15
-4.5V
-4.0V
-3.5V
9
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-6.0V
-I
D
, DRAIN CURRENT (A)
12
-5.0V
1.8
V
GS
= -3.5V
1.6
-4.0V
1.4
-4.5V
-5.0V
1.2
-6.0V
-7.0V
6
-3.0V
3
-2.5V
0
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-8.0V
-10V
1
0.8
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
R
DS(ON)
, ON-RESISTANCE (OHM)
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
o
I
D
= -3.5A
V
GS
= -10V
I
D
= -1.5A
0.3
T
A
= 125
o
C
0.2
0.1
T
A
= 25
o
C
0
125
150
175
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE ( C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
15
T
A
= -55 C
25
o
C
125
o
C
9
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
12
o
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
10
T
A
= 125
o
C
25
o
C
-55
o
C
0.1
1
6
3
0.01
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559 Rev C1(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
