Typical Characteristics: Q1
1.8
1.6
1.4
1.2
1
20
VGS = 10V
6.0V
5.0V
4.5V
16
12
8
VGS = 4.0V
4.0V
4.5V
5.0V
6.0V
8.0V
3.5V
10V
16
4
0.8
0
0
4
8
12
20
0
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
2.2
ID = 2.3A
ID = 4.5A
2
0.12
0.1
VGS = 10V
1.8
1.6
1.4
1.2
1
TA = 125oC
0.08
0.06
0.04
0.02
0
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation with
Temperature.
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
VGS = 0V
TA = -55oC
25oC
VDS = 5V
10
125oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
4
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1
2
3
4
5
6
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559 Rev C(W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
