FDS4559S62Z 参数 Datasheet PDF下载

型号：	FDS4559S62Z
PDF下载：	下载PDF文件查看货源
内容描述：	[Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8]
分类和应用：	开关脉冲光电二极管晶体管
文件页数/大小：	8 页 / 133 K
品牌：	FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

1.3

–1.3

1.2

V_SD

Drain-Source Diode Forward V_GS= 0 V, I_S= 1.3 A (Note 2)

0.8

–0.8

Voltage

V_GS= 0 V, I_S= –1.3 A (Note 2)

–1.2

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 78°C/W when

mounted on a

0.5 in²pad of 2 oz

copper

b) 125°C/W when

mounted on a .02 in²

pad of 2 oz copper

c) 135°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%