FDS4435
Typical Characteristics
$
!#
W
*6
Ã2Ã
W
$W
#$W
#W
%W
#
6
Ã
U
I
@
S "
S
V
8
Ã
I
D
@
8!!
I
6
U
T
D
!
W
9
@
a
D
*6
Ã2Ã"$W
Ã#W
Ã#$W
Ã$W
Ã%W
Ã&W
Ã'W
à W
"$W
!
6
S
9
Ã
D
'
"W
T
G @ '
S
6
H I
S P
%
Ã
P @
I 8
Ã
S #
1
2
V
6
P
'
T
S
!
I
D
6
S
9
'
W
!
"
#
$
!
"
#
$
D Ã9S6DIÃ8VSS@IUÃ6
'6
Ã9S6DITPVS8@ÃWPGU6B@ÃW
'
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
&
%
@
8
I
6 #
U
T
D
T
@
S !
I
P
Ã
@
8
S
V
P
T
I
D
'
6
S
9
Ã
%
$
!$
!$
$
&$
!$
$
D Ã2Ã''6
W
W
'
*6
Ã2Ã
D Ã2Ã##6
H%
C
P
Ã
@ $
8
I
6
U #
T
D
T
@
"
S
I
P
Ã
!
1
2
6
'
'
9
@
a
D
G
6
H
S
P
I
Ã
1
2
6
'
U Ã2Ã
$
$
!$ 8
R
S
U Ã2Ã!$ 8
R
S
!
W
#
%
'
U
-
ÃEVI8UDPIÃU@HQ@S6UVS@Ã 8
R
*6
ÃB6U@ÃUPÃTPVS8@ÃWPGU6B@ÃW
Figure 3. On-Resistance Variation
with Temperature
$
W
'6
Ã2Ã$W
#
6
Ã
U
I
@
S "
S
V
8
Ã
I
D
U
$
Ã2Ã$$ 8
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
R
!$ 8
R
!$ 8
R
6
Ã
U
I
@
S
S
V
8
Ã
I
D
6
S
9
Ã
W
*6
Ã2ÃW
U
$
Ã2Ã !$ 8
!$ 8
$$ 8
R
R
6
S
9
Ã
D
!
R
'
@
T
S
@
W
@
S
Ã
D
6
!
W
"
#
$
!
#
%
'
!
#
*6
ÃB6U@ÃUPÃTPVS8@ÃWPGU6B@ÃW
W
T9
Ã
Ã
7P9`Ã9DP9@ÃAPSX6S9ÃWPGU6B@ÃW
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variationwith Source Current
and Temperature.
FDS4435 Rev. D
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
