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FDS4435A_NL 参数 Datasheet PDF下载

FDS4435A_NL图片预览
型号: FDS4435A_NL
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 623 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS4435
June 1999
FDS4435
P-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
•
•
•
•
-8.8 A, -30 V. R
DS(ON)
= 0.020
@ V
GS
= -10 V
R
DS(ON)
= 0.035
@ V
GS
= -4.5 V
Low gate charge (17nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Motor drives
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©1999
Fairchild Semiconductor Corporation
FDS4435 Rev. D