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FDS4435BZ_F085 参数 Datasheet PDF下载

FDS4435BZ_F085图片预览
型号: FDS4435BZ_F085
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 6 页 / 283 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS4435BZ_F085 P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
V
GS
= -10 V
SINGLE PULSE
R
T
JA
= 125 C/W
T
A
= 25 C
o
o
100
10
1
0.5
-4
10
10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
T
JA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.01
SINGLE PULSE
R
T
JA
= 125 C/W
o
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
TJA
x R
TJA
+ T
A
0.001
-4
10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
5
www.fairchildsemi.com