FDS4435BZ_F085 P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250PA, V
GS
= 0V
I
D
= -250PA, referenced to 25°C
V
DS
= -24V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
-30
-21
1
±10
V
mV/°C
PA
PA
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= -250PA
I
D
= -250PA, referenced to 25°C
V
GS
= -10V, I
D
= -8.8A
V
GS
= -4.5V, I
D
= -6.7A
V
GS
= -10V, I
D
= -8.8A, T
J
= 125°C
V
DS
= -5V, I
D
= -8.8A
-1
-2.1
6
16
26
22
24
20
35
28
S
m:
-3
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
f = 1MHz
1385
275
230
4.5
1845
365
345
pF
pF
pF
:
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to -10V
V
GS
= 0V to -5V
V
DD
= -15V,
I
D
= -8.8A
V
DD
= -15V, I
D
= -8.8A,
V
GS
= -10V, R
GEN
= 6:
10
6
30
12
28
16
5.2
7.4
20
12
48
22
40
23
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= -8.8A
(Note 2)
-0.9
29
23
-1.2
44
35
V
ns
nC
I
F
= -8.8A, di/dt = 100A/Ps
NOTES:
1. R
TJA
is determined with the device mounted on a 1in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJC
is guaranteed by design while R
TCA
is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T
J
= 25°C, L = 1mH, I
AS
= -7A, V
DD
= -30V, V
GS
= -10V
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
2
www.fairchildsemi.com
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
